Lee, Yung-huei: search on Z-Library

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1

Effect of trench edge on pMOSFET reliability

Yung-Huei Lee, Tom Linton, Ken Wu, Neal Mielke

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 584 KB

english, 2001

2

[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown

Lee, Yung-huei, Mielke, Neal, Agostinelli, Marty, Gupta, Sukirti, Lu, Ryan, McMahon, William

Year:

2006

Language:

english

File:

PDF, 492 KB

english, 2006

3

[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - A Statistical Learning Model for Accurate Prediction of Time-Dependent Dielectric Degradation for Low Failure Rates

Joshi, Kaustubh, Lee, Yung-Huei, Yao, Yu-Cheng, Chang, Shu-Wen, Bian, Siao-Syong, Liao, P. J., Shih, Jiaw-Ren, Chen, Min-Jan

Year:

2019

Language:

english

File:

PDF, 891 KB

english, 2019

4

The impact of PMOST bias-temperature degradation on logic circuit reliability performance

Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal Mielke, Ramez Nachman

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 566 KB

english, 2005

5

Thin-Gate-Oxide Breakdown and CPU Failure-Rate Estimation

Lee, Yung-Huei, Mielke, Neal R., McMahon, William, Lu, Yin-Lung Ryan, Pae, Sangwoo

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 740 KB

english, 2007

6

[IEEE 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2007.04.23-2007.04.25)] 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - RTS and 1/f Noise in Flash Memory

Li, Sing-Rong, Lu, Yin-Lung R., McMahon, William, Lee, Yung-Huei, Mielke, Neal

Year:

2007

Language:

english

File:

PDF, 950 KB

english, 2007

7

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow

Wang, Chia-Yu, Shih, Meng-Chun, Lee, Yung-Huei, Wang, Wayne, Thomas, Luc, Lee, Yuan-Jen, Liu, Huanlong, Zhu, Jian, Jan, Guenole, Wang, Allen, Zhong, Tom, Wang, Po-Kang, Lin, Derek, Chen, Chia-Hsiang,

Year:

2017

Language:

english

File:

PDF, 379 KB

english, 2017

8

Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability

Mukhopadhyay, Subhadeep, Lee, Yung-Huei, Lee, Jen-Hao

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 2.42 MB

english, 2018

9

[IEEE 2015 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2015.10.11-2015.10.15)] 2015 IEEE International Integrated Reliability Workshop (IIRW) - Reliability aging and modeling of chip-package interaction on logic technologies featuring high-k metal gate planar and FinFET transistors

Lee, Jen-Hao, Chen, Eliot S.H., Lee, Yung-Huei, Lin, Chun-Hung, Wu, Chun-Yu, Hsieh, Ming-Han, Huang, Kevin, Wang, Jhong-Sheng, Tsai, Yung-Sheng, Lu, Ryan, Shih, Jiaw-Ren

Year:

2015

Language:

english

File:

PDF, 599 KB

english, 2015

10

[IEEE IEEE Custom Integrated Circuits Conference 2006 - San Jose, CA, USA (2006.09.10-2006.09.13)] IEEE Custom Integrated Circuits Conference 2006 - Robust Inductor Design for RF Circuits

Lu, Yin-lung, Lee, Yung-huei, McMahon, William, Fung, Tze-ching

Year:

2006

Language:

english

File:

PDF, 395 KB

english, 2006

11

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

Meng-Chun Shih,, Chia-Yu Wang,, Yung-Huei Lee,, Wayne Wang,, Thomas, Luc, Huanlong Liu,, Jian Zhu,, Yuan-Jen Lee,, Guenole Jan,, Yu-Jen Wang,, Tom Zhong,, Torng, Terry, Po-Kang Wang,, Derek

Year:

2016

Language:

english

File:

PDF, 692 KB

english, 2016

12

ChemInform Abstract: Tandem Isomerization and C-H Activation: Regioselective Hydroheteroarylation of Allylarenes.

Lee, Wei-Chih, Wang, Chun-Han, Lin, Yung-Huei, Shih, Wei-Chun, Ong, Tiow-Gan

Journal:

Year:

2014

File:

PDF, 38 KB

2014

13

Random Telegraph Noise Read Instability Characteristics in a Megabit RRAM Array

Wu, Chun-Yu, Kuo, Wen-Hsien, Wang, Wayne, Lee, Yung-Huei, Chu, Wen-Ting, Chang, Chih-Yang, Liao, Ta-Chuan

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 879 KB

english, 2018

14

Li, Sing-Rong, McMahon, William, Lu, Yin-Lung R., Lee, Yung-Huei

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 379 KB

english, 2008

15

Tandem Isomerization and C–H Activation: Regioselective Hydroheteroarylation of Allylarenes

Lee, Wei-Chih, Wang, Chun-Han, Lin, Yung-Huei, Shih, Wei-Chun, Ong, Tiow-Gan

Journal:

Organic Letters

Year:

2013

Language:

english

File:

PDF, 645 KB

english, 2013

16

[IEEE 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2007.04.23-2007.04.25)] 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Inductor Design Optimization for RFIC Application

Lee, Yung-Huei, Lu, Yin-Lung Ryan, McMahon, William

Year:

2007

Language:

english

File:

PDF, 1016 KB

english, 2007

17

Origin of Initial Rapid Cell Current Reduction in Non-Volatile One-Time Programming Memory

Wu, Chun-Yu, Shih, Meng-Chun, Chang, Chih-Yang, Wang, Wayne, Lee, Jen-Hao, Lee, Yung-Huei, Hsu, Ting-Chen, Ko, Chun-Yao

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 780 KB

english, 2016

18

Reliability Tradeoffs and Scaling Issues of Read Drain Bias in nor Flash Memory

Yung-Huei Lee, McMahon, W., Lu, Y.-L.R., Freidin, Z.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 645 KB

english, 2009

19

[IEEE 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2007.04.23-2007.04.25)] 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Managing Bias-Temperature Instability for Product Reliability

Lee, Yung-Huei, McMahon, William, Mielke, Neal, Lu, Yin-Lung Ryan, Walstra, Steve

Year:

2007

Language:

english

File:

PDF, 1.15 MB

english, 2007

20

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Effect of pMOST bias-temperature instability on circuit reliability performance

Yung-Huei Lee,, Mielke, N., Sabi, B., Stadler, S., Nachman, R., Hu, S.

Year:

2003

Language:

english

File:

PDF, 294 KB

english, 2003

21

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Effect of ESD Layout on the Assembly Yield and Reliability

Lee, Yung-Huei, Chowdhury, Das, Dimagiba, Richard, Ciccariello, Robert

Year:

2006

Language:

english

File:

PDF, 537 KB

english, 2006

22

On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention Optimization

Yung-Huei Lee, McMahon, W., Lu, Y.-L.R., Tewg, J.-Y.J., Ma, S.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 630 KB

english, 2009

23

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Implant damage and gate-oxide-edge effects on product reliability

Yung-Huei Lee,, Nachman, R., Hu, S., Mielke, N., Liu, J.

Year:

2004

Language:

english

File:

PDF, 295 KB

english, 2004

24

Shallow Trench Isolation Edge Effect on Random Telegraph Signal Noise and Implications for Flash Memory

Ruey-Ven Wang, Yung-Huei Lee, Yin-Lung Ryan Lu, McMahon, W., Sam Hu, Ghetti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 653 KB

english, 2009

25

Nickel-Catalysed para-CH Activation of Pyridine with Switchable Regioselective Hydroheteroarylation of Allylarenes

Ong, Tiow Gan, Lee, Wei-Chih, Liu, Cheng-Yuan, Yu, Ming-Shiuan, Chen, Chien-Hung, Lin, Yung-Huei

Journal:

Chemical Communications

Year:

2015

Language:

english

File:

PDF, 702 KB

english, 2015

26

[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Drain Read Disturb Assessment of NOR Flash Memory

Lee, Yung-Huei, Mielke, Neal, McMahon, William, Lu, Yin-Lung R., Meng, Qingru, Jiang, Linda

Year:

2008

Language:

english

File:

PDF, 728 KB

english, 2008

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